(China (Mainland))
Product Summary
The 2SC3356 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. The 2SC3356 has dynamic range and good current characteristic.
Parametrics
2SC3356 absolute maximum ratings: (1)Collector to Base Voltage VCBO: 20 V; (2)Collector to Emitter Voltage VCEO: 12 V; (3)Emitter to Base Voltage VEBO: 3.0 V; (4)Collector Current IC: 100 mA; (5)Total Power Dissipation PT: 200 mW; (6)Junction Temperature Tj: 150 ℃; (7)Storage Temperature Tstg: -65 to +150 ℃.
Features
2SC3356 features: (1)Low Noise and High Gain. NF = 1.1 dB TYP, Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz; (2)High Power Gain. MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 2SC3356 |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
2SC3356 R24 |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
2SC3356 R25 |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
2SC3356F |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
2SC3356-R24/R25 |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
2SC3356R25/R24 |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
2SC3356-T1B R24 |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
2SC3356-T1B R25 |
Other |
|
Data Sheet |
Negotiable |
|
||||
