Product Summary

The N-Channel enhancement mode power field effect transistor FQP8N60 is produced using Fairchild proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. The FQP8N60 is well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

Parametrics

FQP8N60 absolute maximum ratings: (1)IDM Drain Current - Pulsed (Note 1): 30 30 A; (2)VGSS Gate-Source Voltage ± 30 :V; (3)EAS Single Pulsed Avalanche Energy: 230 mJ; (4)IAR Avalanche Current: 7.5 A; (5)EAR Repetitive Avalanche Energy: 14.7 mJ; (6)dv/dt Peak Diode Recovery dv/dt: 4.5 V/ns.

Features

FQP8N60 features: (1)7.5A, 600V, RDS(on) = 1.2Ω @VGS = 10 V; (2)Low gate charge ( typical 28 nC); (3)Low Crss ( typical 12 pF); (4)Fast switching; (5)100% avalanche tested; (6)Improved dv/dt capability.

Diagrams

FQP8N60 simplified circuit

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
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FQP8N60C
FQP8N60C

Fairchild Semiconductor

MOSFET 600V N-Ch Q-FET advance C-Series

Data Sheet

0-1: $0.87
1-25: $0.77
25-100: $0.62
100-250: $0.54
FQP8N60C_Q
FQP8N60C_Q

Fairchild Semiconductor

MOSFET 600V N-Ch Q-FET advance C-Series

Data Sheet

Negotiable