(China (Mainland))
Product Summary
The N-Channel enhancement mode power field effect transistor FQP8N60 is produced using Fairchild proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. The FQP8N60 is well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
Parametrics
FQP8N60 absolute maximum ratings: (1)IDM Drain Current - Pulsed (Note 1): 30 30 A; (2)VGSS Gate-Source Voltage ± 30 :V; (3)EAS Single Pulsed Avalanche Energy: 230 mJ; (4)IAR Avalanche Current: 7.5 A; (5)EAR Repetitive Avalanche Energy: 14.7 mJ; (6)dv/dt Peak Diode Recovery dv/dt: 4.5 V/ns.
Features
FQP8N60 features: (1)7.5A, 600V, RDS(on) = 1.2Ω @VGS = 10 V; (2)Low gate charge ( typical 28 nC); (3)Low Crss ( typical 12 pF); (4)Fast switching; (5)100% avalanche tested; (6)Improved dv/dt capability.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 FQP8N60C |
Fairchild Semiconductor |
MOSFET 600V N-Ch Q-FET advance C-Series |
Data Sheet |
|
|
||||||||||||
|
FQP8N60C_Q |
Fairchild Semiconductor |
MOSFET 600V N-Ch Q-FET advance C-Series |
Data Sheet |
Negotiable |
|
||||||||||||
