Product Summary
The MRF422 is an NPN Silicon RF Power Transistor, which is Designed primarily for applications as a high–power linear amplifier from 2.0 to 30 MHz.
Parametrics
MRF422 absolute maximum ratings: (1)Collector–Emitter Voltage: 40 V; (2)Collector–Base Voltage:85 V; (3)Emitter–Base Voltage: 3.0 V; (4)Collector Current — Continuous: 20 A; (5)Withstanding Current — 10 s: 30 A; (6)Total Device Dissipation @ TC = 25℃: 290 W; (7)Total Device Dissipation Derate above 25°C: 1.66 W/℃; (8)Storage Temperature Range: –65℃ to +150℃.
Features
MRF422 features: (1)Specified 28 Volt, 30 MHz Characteristics — Output Power = 150 W, Minimum Gain = 10 dB, Efficiency = 40%; (2)Intermodulation Distortion @ 150 W (PEP) — IMD = –30 dB (Min); (3)100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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MRF422 |
M/A-COM Technology Solutions |
Transistors RF Bipolar Power 2-30MHz 150Watts 28Volt Gain 10dB |
Data Sheet |
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M/A-COM Technology Solutions |
Transistors RF Bipolar Power 2-30MHz 150Watts 28Volt Gain 10dB |
Data Sheet |
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