TC58DVG02A1FT00

Erasable Programmable Read-Only Memory, 3.3 V, 50 μA, TSOP48

Rated 5 Rating 5 | reviews | Write a review

Price:: US $1.00~5.00 / piece [Get Latest Price]

Reference price:

Qty (lots)	Price/lot
	US $1.00~5.00

PartNumber:: TC58DVG02A1FT00

Brand:: Toshiba Semiconductor - Toshiba | Pack: DIP | D/C: 10+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

Place Order via Escrow Service

Sold By

Ms. Tesi's store

(China (Mainland))

add to my favourite

100% Positive feedback

Detailed seller ratings

Visit Store

Contact Now

Esrcow Service

Place orders confidently and securely via it

Safe payments
Quick and easy transactions
Free service charges

Learn More >>

Previous Next

Products Upload time: 2012-03-25

From Other Seller

Part Number:TC58DVG02A1FT00
US $1.00 - 5.00
HEF4051BT

US $0.15 - 1.20 / Piece
(0) Remove
IRF9540NPBF

US $0.50 - 3.20 / Piece
(0) Remove
Quantity:

piece

Product Summary

The TC58DVG02A1FT00 is a single 3.3 V 1-Gbit (1,107,296,256) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes × 32 pages × 8192 blocks. The TC58DVG02A1FT00 has a 528-byte static register which allows program and read data to be transferred between the register and the memory cell array in 528-byte increments. The Erase operation is implemented in a single block unit. The TC58DVG02A1FT00 is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for command inputs.

Parametrics

TC58DVG02A1FT00 absolute maximum ratings: (1)VCC Power Supply Voltage: -0.6 to 4.6 V; (2)VIN Input Voltage: -0.6 to 4.6 V; (3)VI/O Input/Output Voltage: -0.6 V to VCC + 0.3 V (≤4.6 V) V; (4)PD Power Dissipation: 0.3 W; (5)Tsolder Soldering Temperature (10s): 260 ℃; (6)Tstg Storage Temperature: -55 to 150 ℃; (7)Topr Operating Temperature: 0 to 70 ℃.

Features

TC58DVG02A1FT00 features: (1)Modes: Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Multi Block Program, Multi Block Erase; (2)Mode control: Serial input/output, Command control; (3)Power supply: VCC = 2.7 V to 3.6 V; (4)Program/Erase Cycles 1E5 cycle (with ECC); (5)Access time: Cell array to register 25 μs max, Serial Read Cycle: 50 ns min; (6)Operating current: Read (50 ns cycle) 10 mA typ., Program (avg.) 10 mA typ., Erase (avg.) 10 mA typ., Standby 50 μA max.