Product Summary

The IRF5800TRPBF is a HEXFET Power MOSFET. It utilizes advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The IRF5800TRPBF is ideal for applications where printed circuit board space is at a premium. The unique thermal design and RDS(on) reduction enables a current-handling increase of nearly 300% compared to the SOT-23.

Parametrics

IRF5800TRPBF absolute maximum ratings: (1)VDS Drain- Source Voltage: -30 V; (2)ID @ TA = 25℃ Continuous Drain Current, VGS @ -4.5V: -4.0 A; (3)ID @ TA= 70℃ Continuous Drain Current, VGS @ -4.5V: -3.2 A; (4)IDM Pulsed Drain Current: -32 A; (5)PD @TA = 25℃ Power Dissipation: 2.0 W; (6)PD @TA = 70℃ Power Dissipation: 1.3 W; (7)Linear Derating Factor: 0.016 W/℃; (8)EAS Single Pulse Avalanche Energy: 20.6 mJ; (9)VGS Gate-to-Source Voltage: ± 20 V; (10)TJ, TSTG Junction and Storage Temperature Range: -55 to + 150 ℃.

Features

IRF5800TRPBF features: (1)Ultra Low On-Resistance; (2)P-Channel MOSFET; (3)Surface Mount; (4)Available in Tape & Reel; (5)Low Gate Charge.

Diagrams

IRF5800TRPBF pin

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(USD)		 Quantity
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