(China (Mainland))
Product Summary
The IRF7901D1TR is a Co-Packaged Dual MOSFET Plus Schottky Diode. It offers the designer an innovative, board space saving solution for switching regulator and power management applications. Advanced HEXFET MOSFETs combined with low forward drop Schottky results in an extremely efficient device suitable for a wide variety of portable electronics applications. The IRF7901D1TR can be used in an application with dramatically reduced board space.
Parametrics
IRF7901D1TR absolute maximum ratings: (1)Drain-Source Voltage VDS: 30 V; (2)Gate-Source Voltage VGS: ±20; (3)Continuous Output Current (VGS ≥ 4.5V) ID: 6.2 A; (4)Pulsed Drain Current IDM: 24 A; (5)Power Dissipation TL = 100℃ PD: 2.0 W; (6)Junction & Storage Temperature Range TJ,TSTG: –55 to 150 ℃; (7)Pulsed Source Current ISM: 12 A.
Features
IRF7901D1TR features: (1)Co-Pack Dual N-channel HEXFET Power MOSFET and Schottky Diode; (2)Ideal for Synchronous Buck DC-DC Converters Up to 5A Peak Output; (3)Low Conduction Losses; (4)Low Switching Losses; (5)Low Vf Schottky Rectifier.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
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 IRF7901D1TR |
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MOSFET DUAL N-CH 30V 6.2A 8-SOIC |
Data Sheet |
Negotiable |
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IRF7901D1TRPBF |
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MOSFET DUAL N-CH 30V 6.2A 8-SOIC |
Data Sheet |
Negotiable |
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