Product Summary

The KSD363R is an NPN Epitaxial Silicon Transistor.

Parametrics

KSD363R absolute maximum ratings: (1)VCBO Collector-Base Voltage: 300 V; (2)VCEO Collector-Emitter Voltage: 120 V; (3)VEBO Emitter-Base Voltage: 8 V; (4)IC Collector Current: 6 A; (5)PC Collector Dissipation (TC=25℃): 40 W; (6)TJ Junction Temperature: 150 ℃; (7)TSTG Storage Temperature: - 55 ~ 150 ℃.

Features

KSD363R features: (1)Collector-Base Voltage: VCBO=300V; (2)Collector Current: IC=6A; (3)Collector Dissipation: PC=40W(TC=25℃).

Diagrams

KSD363R dimensions

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
KSD363R
KSD363R
Fairchild Semiconductor
Transistors Bipolar (BJT) NPN Epitaxial Sil
Data Sheet
0-1: $2.24
1-25: $2.09
25-100: $1.69
100-250: $1.35
KSD363RTU
KSD363RTU
Fairchild Semiconductor
Transistors Bipolar (BJT) NPN Epitaxial Sil
Data Sheet
0-1: $0.47
1-25: $0.37
25-100: $0.32
100-250: $0.28