(China (Mainland))
Product Summary
The IRLML6302TR is a rectifier. The IRLML6302TR utilizes advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management.
Parametrics
IRLML6302TR absolute maximum ratings: (1)VDS Drain- Source Voltage: -20 V; (2)ID @ TA = 25℃ Continuous Drain Current, VGS @ -4.5V: -3.7 A; (3)ID @ TA= 70℃ Continuous Drain Current, VGS @ -4.5V: -2.2 A; (4)IDM Pulsed Drain Current: -22 A; (5)PD @TA = 25℃ Power Dissipation: 1.3 W; (6)PD @TA = 70℃ Power Dissipation: 0.8 W; (7)Linear Derating Factor: 0.01 W/℃; (8)EAS Single Pulse Avalanche Energy: 11 mJ; (9)VGS Gate-to-Source Voltage: ±12 V; (10)TJ, TSTG Junction and Storage Temperature Range: -55 to + 150 ℃.
Features
IRLML6302TR features: (1)Ultra Low On-Resistance; (2)P-Channel MOSFET; (3)SOT-23 Footprint; (4)Low Profile (<1.1mm); (5)Available in Tape and Reel; (6)Fast Switching.
Diagrams
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Pricing (USD) |
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 IRLML6302TR |
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MOSFET P-CH 20V 780MA SOT-23 |
Data Sheet |
Negotiable |
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IRLML6302TRPBF |
International Rectifier |
MOSFET MOSFT P-Ch -0.62A 600mOhm 2.4nC LogLvl |
Data Sheet |
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