(China (Mainland))
Product Summary
The 2SC458C is a silicon NPN epitaxial transistor. It is used in low frequency low noise amplifier.
Parametrics
2SC458C absolute maximum ratings: (1)Collector to base voltage VCBO: 30 V; (2)Collector to emitter voltage VCEO: 30 V; (3)Emitter to base voltage VEBO: 5 V; (4)Collector current IC: 100 mA; (5)Emitter current IE: –100 mA; (6)Collector power dissipation PC: 200 mW; (7)Junction temperature Tj: 150 ℃; (8)Storage temperature Tstg: –55 to +150 ℃.
Features
2SC458C electrical characteristics: (1)Collector to base breakdown voltage V(BR)CBO: min=30 V; (2)Collector to emitter breakdown voltage V(BR)CEO: min=30 V; (3)Emitter to base breakdown voltage V(BR)EBO: min=5 V; (4)Collector cutoff current ICBO: max=0.5 μA; (5)Emitter cutoff current IEBO: max=0.5 μA; (6)DC current transfer ratio hFE*1: min=100, max=500; (7)Collector to emitter saturation voltage VCE(sat): max=0.2 V; (8)Base to emitter voltage VBE: typ=0.67 V, max=0.75 V; (9)Gain bandwidth product fT: typ=230 MHz.
Diagrams
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